Implanted boron depth profiles in the AZ111 photoresist

Vacancy and interstitial depth profiles in ion-implanted silicon

An experimental method of studying shifts between concentration-versus-depth profiles of vacancyand interstitial-type defects in ion-implanted silicon is demonstrated. The concept is based on deep level transient spectroscopy measurements utilizing the filling pulse variation technique. The vacancy profile, represented by the vacancy–oxygen center, and the interstitial profile, represented by t...

Metal gettering by boron-silicide precipitates in boron-implanted silicon

Sandia National Laboratories, Albuquerque, New Mexico 871 85-1 056 PT"3 1 j 3 r 3 q a,,3 We show that Fe, Coy Cu, and Au impurities in Si are strongly gettered to boron-silicideprecipitates formed by supersaturation B implantation and annealing. Effective binding fr energies relative to interstitial solution range from somewhat above 1 to more than 2 eV. The B-Si precipitates formed at temperat...

Interstitial charge states in boron-implanted silicon

It is becoming increasingly clear that simulation models of transient enhanced diffusion sTEDd in silicon need to incorporate interstitial charging effects accurately in order to adequately reproduce experimental data near the surface and near the underlying junction. However, in the case of boron TED, the relevant charge states and ionization levels of both boron and silicon interstitial atoms...

Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation

Depth Profiles of Ions Implanted into Spherical Dust Grains—a TRIM Based Model

Dust in the space and in laboratory experiments is often exposed to energetic ions. During this process, the ions are implanted into the grain. The grain can collect a significant charge that is spontaneously released due to ion field emission. To support the results of laboratory experiments on ion field emission, we adapted a TRIM-code (developed originally for a study of planar surfaces) on ...